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PD-96990
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)
Product Summary
Part Number Radiation Level IRHNA67264 100K Rads (Si) IRHNA63264 300K Rads (Si) RDS(on) 0.040 0.040 ID 50A 50A
IRHNA67264 250V, N-CHANNEL
TECHNOLOGY
SMD-2
International Rectifier's R6 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today's high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.
TM
Features:
n n n n n n n n n n
Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page 50 31.5 200 250 2.0 20 240 50 25 4.1 -55 to 150 300 (for 5s) 3.3 (Typical)
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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06/28/05
IRHNA67264
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
250 -- -- 2.0 37 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.3 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2.8 -- -- 0.040 4.0 -- 10 25 100 -100 220 50 70 35 70 80 15 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 31.5A A
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 31.5A A VDS = 200V ,VGS=0V VDS = 200V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 12V, ID = 50A VDS = 125V VDD = 125V, ID = 50A, VGS = 12V, RG = 2.35
ns
nH
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain
Ciss C oss C rss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance
-- -- -- --
6912 940 10.8 0.52
-- -- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 50 200 1.2 700 15
Test Conditions
A
V ns C Tj = 25C, IS = 50A, VGS = 0V A Tj = 25C, IF = 50A, di/dt 100A/s VDD 25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC Junction-to-Case
Min Typ Max Units
-- -- 0.5
C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHNA67264
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Sourcee On-State Resistance (SMD-2) Diode Forward Voltage Up to 300K Rads (Si)
Min
250 2.0 -- -- -- -- -- --
Max
Units
V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA V GS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS= 200V, VGS= 0V VGS = 12V, ID = 31.5A VGS = 12V, ID = 31.5A VGS = 0V, ID = 50A
-- 4.0 100 -100 10 0.041 0.040 1.2
Part numbers IRHNA67264 and IRHNA63264
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Tables.
Table 2. Single Event Effect Safe Operating Area
Ion LET
(MeV/(mg/cm2)) Ag Xe Au 43 59 90
Energy
(MeV) 1217 823 1480
Range
(m) 112 66 80
@VGS = @VGS =
VDS (V)
@VGS = @VGS = @VGS = @VGS =
0V 250 250 75
-5V 250 250 75
-10V 250 250 -
-15V 250 50 -
-17V 100 -
-20V 50 -
300 250 200 150 100 50 0 0 -5 -10 VGS -15 -20
VDS
Ag Xe Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHNA67264
Pre-Irradiation
1000
TOP
100
BOTTOM
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V 5.0V
1000
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
10
5.0V
5.0V 60s PULSE WIDTH Tj = 150C 10 1 10 VDS , Drain-to-Source Voltage (V) 100
60s PULSE WIDTH Tj = 25C 1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance (Normalized)
3.0
ID = 50A
2.5
ID, Drain-to-Source Current (A)
2.0
T J = 150C 100
1.5
T J = 25C VDS = 50V 15 60s PULSE WIDTH 5 5.5 6 6.5 7 7.5 8
1.0
0.5
VGS = 12V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
10
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHNA67264
14000 12000 10000 8000 6000 4000 2000 0 1
VGS, Gate-to-Source Voltage (V)
100KHz VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd
C oss = C ds + C gd
20 ID = 50A 16 VDS = 200V VDS = 125V VDS = 50V
C, Capacitance (pF)
Ciss Coss
12
8
Crss
4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 50 100 150 200 250
10
100
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
100 T J = 150C 10
T J = 25C
ID, Drain-to-Source Current (A)
100
100s 10 1ms 1 Tc = 25C Tj = 150C Single Pulse 1 10 100 10ms
1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD , Source-to-Drain Voltage (V)
0.1
1000
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRHNA67264
Pre-Irradiation
50
VGS
VDS
RD
40
ID, Drain Current (A)
RG VGS
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
-V DD
30
20
Fig 10a. Switching Time Test Circuit
10
VDS 90%
0 25 50 75 100 125 150
10% VGS
td(on) tr t d(off) tf
T C , Case Temperature (C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.1
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHNA67264
500
EAS , Single Pulse Avalanche Energy (mJ)
15V
TOP
400
BOTTOM
300
ID 22.4A 31.6A 50A
VDS
L
DRIVER
RG
D.U.T.
IAS tp
+ - VDD
A
200
VGS 20V
0.01
Fig 12a. Unclamped Inductive Test Circuit
100
0 25 50 75 100 125 150
V(BR)DSS tp
Starting T J , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS
QGD
VGS
3mA
D.U.T.
+ V - DS
VG
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHNA67264
Pre-Irradiation
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = 50V, starting TJ = 25C, L= 0.19mH Peak IL = 50A, VGS = 12V A ISD 50A, di/dt 900/s, VDD 250V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 200 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 06/2005
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